The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Aug. 01, 2017
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
Peter J. Zampardi, Jr., Newbury Park, CA (US);
Kai Hay Kwok, Thousand Oaks, CA (US);
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/737 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/732 (2006.01); H01L 23/66 (2006.01); H01L 29/165 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H03F 3/195 (2006.01); H03F 3/213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7378 (2013.01); H01L 23/66 (2013.01); H01L 29/0821 (2013.01); H01L 29/0826 (2013.01); H01L 29/165 (2013.01); H01L 29/205 (2013.01); H01L 29/36 (2013.01); H01L 29/365 (2013.01); H01L 29/66242 (2013.01); H01L 29/73 (2013.01); H01L 29/737 (2013.01); H01L 29/7325 (2013.01); H01L 29/7371 (2013.01); H01L 2223/665 (2013.01); H01L 2223/6655 (2013.01); H01L 2223/6677 (2013.01); H01L 2223/6683 (2013.01); H03F 3/195 (2013.01); H03F 3/213 (2013.01); H03F 2200/451 (2013.01);
Abstract
This disclosure relates to methods of forming bipolar transistors, such as heterojunction bipolar transistors. The methods may include forming a sub-collector over a substrate, forming a first portion of a collector over the sub-collector and doping a second portion of the collector to form a doping spike. The method may further include forming a third portion of the collector over the doping spike and forming a base of the bipolar transistor over the third portion of the collector.