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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10157984 B1

PDFFull Text
Date of Patent:
Dec. 18, 2018

Filed:

Dec. 14, 2015

Semiconductor device integrating high and low voltage devices

Applicant:

Alpha & Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Inventor:

Hideaki Tsuchiko, San Jose, CA (US);

Assignee:

Alpha & Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Attorneys:

JDI Patent

Joshua Isenberg

Robert Pullman

Primary Examiner:

Allan R Wilson

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8222 (2006.01); H01L 21/8228 (2006.01); H01L 21/8234 (2006.01); H01L 21/761 (2006.01); H01L 27/06 (2006.01); H01L 27/082 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/735 (2006.01); H01L 29/861 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/761 (2013.01); H01L 21/8222 (2013.01); H01L 21/8228 (2013.01); H01L 21/823481 (2013.01); H01L 21/823493 (2013.01); H01L 27/0623 (2013.01); H01L 27/0629 (2013.01); H01L 27/0635 (2013.01); H01L 27/088 (2013.01); H01L 27/0821 (2013.01); H01L 27/0823 (2013.01); H01L 29/063 (2013.01); H01L 29/10 (2013.01); H01L 29/1079 (2013.01); H01L 29/1083 (2013.01); H01L 29/66272 (2013.01); H01L 29/732 (2013.01); H01L 29/735 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 29/8611 (2013.01); H01L 29/42368 (2013.01);
Abstract

The present invention is directed to a method for forming multiple active components, such as bipolar transistors, MOSFETs, diodes, etc., on a semiconductor substrate so that active components with higher operation voltage may be formed on a common substrate with a lower operation voltage device and incorporating the existing proven process flow of making the lower operation voltage active components. The present invention is further directed to a method for forming a device of increasing operation voltage over an existing device of same functionality by adding a few steps in the early manufacturing process of the existing device therefore without drastically affecting the device performance.

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