The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Sep. 17, 2015
Anvil Semiconductors Limited, Coventry, GB;
Peter Ward, Peterborough, GB;
Neophytos Lophitis, Hinckley, GB;
Tanya Trajkovic, Cambridge, GB;
Florin Udrea, Cambridge, GB;
Anvil Semiconductors Limited, Coventry, GB;
Abstract
We disclose a high voltage semiconductor device comprising a semiconductor substrate of a second conductivity type; a semiconductor drift region of the second conductivity type disposed over the semiconductor substrate, the semiconductor substrate region having higher doping concentration than the drift region; a semiconductor region of a first conductivity type, opposite to the second conductivity type, formed on the surface of the device and within the semiconductor drift region, the semiconductor region having higher doping concentration than the drift region; and a lateral extension of the first conductivity type extending laterally from the semiconductor region into the drift region, the lateral extension being spaced from a surface of the device.