The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Oct. 31, 2017
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Takuo Funaya, Tokyo, JP;

Hiromi Shigihara, Tokyo, JP;

Hisao Shigihara, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Kawasaki-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/495 (2006.01); H01L 23/522 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 28/10 (2013.01); H01L 23/49575 (2013.01); H01L 23/5227 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/49 (2013.01); H01L 27/0617 (2013.01); H01L 27/1203 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/06102 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/4945 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/49175 (2013.01); H01L 2924/10161 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/30107 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a main surface, a first insulating film formed on the main surface, a first coil formed on the first insulating film, a second insulating film formed on the first coil and having a first main surface and first side surfaces continuous with the first main surface, a third insulating film formed on the first main surface of the second insulating film and having a second main surface and second side surfaces continuous with the second main surface, and a second coil formed on the second main surface of the third insulating film. The second insulating film and the third insulating film are formed as a laminated insulating film together. A thickness of the second coil is greater than a thickness of the first coil in a thickness direction of the semiconductor substrate.


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