The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
May. 15, 2017
Canon Anelva Corporation, Kawasaki-shi, JP;
CANON ANELVA CORPORATION, Kawasaki-shi, JP;
Abstract
Provided are a method of manufacturing a magnetoresistive element and a manufacturing system which are capable of manufacturing a magnetoresistive element achieving further downscaling, i.e., further increase in the degree of integration of the magnetoresistive element while having high magnetic properties. The method includes: preparing a stacked film including one of the two magnetic layers, a layer to form the tunnel barrier layer, and the other of the two magnetic layers, on a substrate; forming multiple separated stacked films on the substrate by separating the stacked film into the multiple stacked films by etching; irradiating side portions of the multiple separated stacked films with ion beams in a pressure-reducible process chamber; and after the irradiation with the ion beams, forming oxide layers or nitride layers on surfaces of the multiple stacked films by introducing an oxidizing gas or a nitriding gas into the process chamber.