The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Aug. 03, 2017
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Kunio Watanabe, Sakata, JP;

Masaki Okuyama, Tsuruoka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11568 (2017.01); H01L 29/792 (2006.01); H01L 21/266 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 27/11573 (2017.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 21/266 (2013.01); H01L 21/28282 (2013.01); H01L 21/31144 (2013.01); H01L 27/11573 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/26513 (2013.01);
Abstract

A semiconductor device includes: a memory transistor including a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a first gate electrode that are disposed in sequence on a substrate; and a MOS transistor including a third silicon oxide film and a second gate electrode that are disposed in sequence on the substrate. The memory transistor has a side wall including an extending portion of the first silicon oxide film, a second silicon nitride film that is in contact with the first silicon nitride film, and a fourth silicon oxide film that are disposed in sequence on the substrate, and the MOS transistor has a side wall including a fifth silicon oxide film that is disposed on the substrate.


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