The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Aug. 17, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Winfried Bakalski, Munich, DE;
Werner Simbuerger, Haar, DE;
Anton Steltenpohl, Munich, DE;
Hans Taddiken, Munich, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); G05F 3/20 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H03G 1/00 (2006.01);
U.S. Cl.
CPC ...
G05F 3/205 (2013.01); H01L 27/0629 (2013.01); H01L 27/0922 (2013.01); H01L 29/0615 (2013.01); H01L 29/1029 (2013.01); H03G 1/007 (2013.01); H03G 1/0023 (2013.01); H03G 1/0029 (2013.01); H03G 1/0088 (2013.01);
Abstract
In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.
Bakalski, Winfried. (2018). Integrated circuit with an amplifier mosfet (U.S. Patent No. 10156864). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10156864
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile