The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
May. 04, 2016
Applicant:
Clemson University, Clemson, SC (US);
Inventors:
Joseph W. Kolis, Central, SC (US);
Colin D. McMillen, Liberty, SC (US);
Assignee:
University of South Carolina, Columbia, SC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 9/02 (2006.01); C30B 29/28 (2006.01); C30B 7/10 (2006.01); H01S 3/06 (2006.01); H01S 3/16 (2006.01); H01S 3/063 (2006.01); H01S 3/113 (2006.01);
U.S. Cl.
CPC ...
C30B 29/28 (2013.01); C30B 7/10 (2013.01); H01S 3/0612 (2013.01); H01S 3/0617 (2013.01); H01S 3/0632 (2013.01); H01S 3/113 (2013.01); H01S 3/1611 (2013.01); H01S 3/1618 (2013.01); H01S 3/1643 (2013.01); H01S 2301/02 (2013.01);
Abstract
Heterogeneous monolithic crystals that can include multiple regimes in a complex geometry are described. The crystals can be advantageously utilized in laser applications. The heterogeneous crystals can be created through growth of different regimes in interior voids formed in a seed crystal, which can in turn be homogeneous or heterogeneous. In one particular embodiment, a regime can be grown within a void of a seed crystal by use of a hydrothermal growth process. Formed crystals can be utilized in lasing and waveguiding applications, among others.