The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Jan. 11, 2017
Applicant:
Beijing Apollo Ding Rong Solar Technology Co., Ltd., Santa Clara, CN;
Inventors:
Rouin Farshchi, Palo Alto, CA (US);
Neil Mackie, Fremont, CA (US);
Assignee:
BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/06 (2006.01); C23C 14/00 (2006.01); C23C 14/54 (2006.01); C23C 14/56 (2006.01); H01J 37/34 (2006.01); H01L 31/032 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0623 (2013.01); C23C 14/0057 (2013.01); C23C 14/541 (2013.01); C23C 14/562 (2013.01); C23C 14/568 (2013.01); H01L 31/022425 (2013.01); H01L 31/0324 (2013.01); H01L 31/18 (2013.01); H01J 37/3473 (2013.01);
Abstract
A method of making a semiconductor structure includes a step of sputtering silver, copper, indium, and gallium on a substrate in an ambient including at least one chalcogen to deposit an alloy of silver, copper, indium, gallium, and at least one chalcogen. A film of the alloy can be deposited on a continuously moving substrate with a high throughput to form a p-type semiconductor absorber layer of a photovoltaic cell.