The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Nov. 18, 2016
Massachusetts Institute of Technology, Cambridge, MA (US);
Luxembourg Institute of Science and Technology, Belvaux, LU;
Karen K. Gleason, Cambridge, MA (US);
Minghui Wang, Quincy, MA (US);
Nicolas D. Boscher, Audun-le-Tiche, FR;
Patrick Choquet, Longeville-les-Metz, FR;
Massachusetts Institute of Technology, Cambridge, MA (US);
Luxembourg Institute of Science and Technology, Belvaux, LU;
Abstract
Described herein are facile, one-step initiated plasma enhanced chemical vapor deposition (iPECVD) methods of synthesizing hyper-thin (e.g., sub-100 nm) and flexible metal organic covalent network (MOCN) layers. As an example, the MOCN may be made from zinc tetraphenylporphyrin (ZnTPP) building units. When deposited on a membrane support, the MOCN layers demonstrate gas separation exceeding the upper bounds for multiple gas pairs while reducing the flux as compared to the support alone.