The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Oct. 07, 2016
Arizona Board of Regents on Behalf of Arizona State University, Scottsdale, AZ (US);
Qing Hua Wang, Scottsdale, AZ (US);
Ximo Chu, Tempe, AZ (US);
Alexander Green, Scottsdale, AZ (US);
Ahmed Yousaf, Tempe, AZ (US);
ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (US);
Abstract
Embodiments of the invention provide a lithium-free metal dichalcogenides functionalization method where a metal dichalcogenide including a surface of predominantly semiconducting 2H phase is reacted with an aryl diazonium salt by exposing at least a portion of transition metal dichalcogenide to the aryl diazonium salt in the absence of alkyl lithium or alkyl lithium. A substantial portion of the reaction of the at least one aryl diazonium salt with the at least one transition metal dichalcogenide occurs with the semiconducting 2H phase. The aryl diazonium salt can be 4-nitrobenzenediazonium tetrafluoroborate or 4-carboxybenzene diazonium tetrafluoroborate, and the metal dichalcogenide can be MoS. The semiconducting 2H phase of the transition metal dichalcogenide is derived directly from mechanical exfoliation such as mechanical cleaving and/or sonication.