The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Apr. 25, 2016
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventors:

Yoshiaki Tamura, Kanagawa, JP;

Tetsuya Haruna, Kanagawa, JP;

Yuki Kawaguchi, Kanagawa, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/02 (2006.01); C03C 13/04 (2006.01); C03B 37/014 (2006.01); C03B 37/012 (2006.01); C03B 37/018 (2006.01);
U.S. Cl.
CPC ...
C03C 13/046 (2013.01); C03B 37/014 (2013.01); C03B 37/0124 (2013.01); C03B 37/01211 (2013.01); C03B 37/01237 (2013.01); C03B 37/01807 (2013.01); C03B 37/01861 (2013.01); C03B 2201/12 (2013.01); C03B 2201/20 (2013.01); C03B 2201/50 (2013.01); C03B 2201/54 (2013.01); C03B 2203/22 (2013.01); C03B 2203/222 (2013.01); C03C 2201/12 (2013.01); C03C 2201/50 (2013.01); C03C 2201/54 (2013.01);
Abstract

An optical fiber preform of the present embodiment comprises a core portion and a cladding each comprised of silica glass. The core portion has a first dopant region including a central axis of the core portion and a second dopant region away from the central axis. The first dopant region contains a first dopant selected from among Na, K, and their compounds, and a concentration of the first dopant is 10 atomic ppm or more but 2,000 atomic ppm or less. The second dopant region contains a second dopant reducing viscosity of the silica glass. The second dopant has, as a characteristic at a temperature of 2,000° C. to 2,300° C., a diffusion coefficient of 1×10cm/s or higher but lower than that of the first dopant, and a concentration of the second dopant region is 10 atomic ppm or more.


Find Patent Forward Citations

Loading…