The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
May. 14, 2017
Applicant:
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Inventors:
Hongliang Lin, Xiamen, CN;
Chaoyu Wu, Xiamen, CN;
Yi-Jui Huang, Xiamen, CN;
Chun-I Wu, Xiamen, CN;
Ching-Shan Tao, Xiamen, CN;
Junkai Huang, Xiamen, CN;
Duxiang Wang, Xiamen, CN;
Assignee:
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/30 (2010.01); H01L 33/00 (2010.01); A01G 7/04 (2006.01); H01L 33/08 (2010.01); H01L 33/10 (2010.01); H01L 33/12 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
A01G 7/045 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/10 (2013.01); Y02P 60/149 (2015.11);
Abstract
A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting portion has a strained light-emitting layer with a component formula of GaInAsP(0<X<1 and 0<Y<1), and a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer.