The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jul. 31, 2017
Applicant:
William F. Krupke, Pleasanton, CA (US);
Inventor:
William F. Krupke, Pleasanton, CA (US);
Assignee:
WFK LASERS, LLC, Pleasanton, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/16 (2006.01); H01S 3/0941 (2006.01); G02F 1/355 (2006.01); H01S 3/109 (2006.01); H01S 3/11 (2006.01); H01S 3/0933 (2006.01); G02F 1/37 (2006.01); H01S 3/094 (2006.01); H01S 5/323 (2006.01); H01S 3/00 (2006.01); H01S 3/06 (2006.01);
U.S. Cl.
CPC ...
H01S 3/1636 (2013.01); G02F 1/3551 (2013.01); G02F 1/37 (2013.01); H01S 3/0933 (2013.01); H01S 3/0941 (2013.01); H01S 3/109 (2013.01); H01S 3/11 (2013.01); H01S 3/1115 (2013.01); H01S 3/1623 (2013.01); H01S 3/0092 (2013.01); H01S 3/0602 (2013.01); H01S 3/09415 (2013.01); H01S 3/094076 (2013.01); H01S 5/32341 (2013.01);
Abstract
A diode pumped solid state laser is provided which includes a ruby crystal optical gain medium and a high bandgap semiconductor laser diode (LD) or light emitting diode (LED) pump source to directly optically pump the gain medium. The high-bandgap semiconductor LD or LED is a semiconductor device whose chemical composition is chosen to provide output radiation at an approximate wavelength of ˜405 nm. The ruby crystal produces laser output at the relatively short wavelength of ˜694 nm.