The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jun. 28, 2017
Toshiba Memory Corporation, Tokyo, JP;
Yoshiki Kamata, Tokyo, JP;
Yoshiaki Asao, Kawasaki Kanagawa, JP;
Iwao Kunishima, Yokohama Kanagawa, JP;
Misako Morota, Tokyo, JP;
Toshiba Memory Corporation, Tokyo, JP;
Abstract
A memory device according to an embodiment includes a first conductive layer, a second conductive layer, a third conductive layer intersecting the first conductive layer and the second conductive layer, and a resistance change layer including a first region which is provided between the first conductive layer and the third conductive layer and has a superlattice structure, a second region which is provided between the second conductive layer and the third conductive layer and has the superlattice structure, and a third region which is provided between the first region and the second region. The third region includes at least one element selected from the group consisting of O, F, C, P, B, N, H, Bi, Cd, Zn, Ga, Se, Al, S, Be, In, and Pb. Concentration of the at least one element in the third region is higher than that in the first region and the second region.