The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Aug. 29, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Yong-seok Choi, Suwon-si, KR;
Min-ho Kim, Hwaseong-si, KR;
Jeong-wook Lee, Yongin-si, KR;
Jai-won Jean, Seoul, KR;
Chul-min Kim, Gunpo-si, KR;
Jae-deok Jeong, Suwon-si, KR;
Min-hwan Kim, Ansan-si, KR;
Jang-mi Kim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×10/cmand less than or equal to 1.0×10/cm. Thus, the semiconductor light-emitting device may have increased light output and reliability.