The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jun. 19, 2017
Genesis Photonics Inc., Tainan, TW;
Chi-Feng Huang, Tainan, TW;
Ching-Liang Lin, Taoyuan, TW;
Shen-Jie Wang, New Taipei, TW;
Jyun-De Wu, Tainan, TW;
Yu-Chu Li, Chiayi, TW;
Chun-Chieh Lee, Tainan, TW;
Genesis Photonics Inc., Tainan, TW;
Abstract
A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising AlInGaN layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The AlInGaN layers stacked on the light emitting layer, where 0<x<1, 0≤y<1, and 0<x+y<1, and the GaN based layer interposed between two of the AlInGaN layers, and the ohmic contact layer is disposed on the AlInGaN layers.