The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Aug. 21, 2014
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Aledia, Grenoble, FR;
Ivan-Christophe Robin, Grenoble, FR;
Amelie Dussaigne, Bizonnes, FR;
Commissariat à l'énergie atomique et aux énergies alternatives, Paris, FR;
ALEDIA, Grenoble, FR;
Abstract
A light emitting diode including an n-doped InGaN layer and a p-doped InGaN layer, and an active area arranged between the InGaN layer and the InGaN layer including: a first InN layer with a thickness e; a second InN layer with a thickness e; a separating layer arranged between the InN layers and including InGaN and a thickness <3 nm; an InGaN layer arranged between the InGaN layer and the first InN layer; an InGaN layer arranged between the InGaN layer and the second InN layer; wherein the indium compositions Xn, Xp, Xb, X1 and X2 are between 0 and about 0.25, and wherein the thicknesses eand eare such that e<e.