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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10153346 B1

PDFFull Text
Date of Patent:
Dec. 11, 2018

Filed:

Mar. 24, 2016

Semiconductor device and method for manufacturing the same

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Setagaya, JP;

Kengo Akimoto, Atsugi, JP;

Yusuke Nonaka, Atsugi, JP;

Hiroshi Kanemura, Tochigi, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Robinson Intellectual Property Law Office

Eric J. Robinson

Primary Examiner:

Cuong B Nguyen

Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/247 (2013.01); H01L 21/02422 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/24 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01); H01L 29/78696 (2013.01); H01L 27/1225 (2013.01);
Abstract

To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a sputtering method with the use of a polycrystalline sputtering target. In that case, partial pressure of water in a deposition chamber before or in the deposition is set to be lower than or equal to 10Pa, preferably lower than or equal to 10Pa, more preferably lower than or equal to 10Pa. Thus, a dense oxide semiconductor film is obtained. The density of the oxide semiconductor film is higher than 6.0 g/cmand lower than 6.375 g/cm.

Find Patent Forward Citations

Yamazaki, Shunpei. (2018). Semiconductor device and method for manufacturing the same (U.S. Patent No. 10153346). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10153346

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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