The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jun. 03, 2016
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;
Denso Corporation, Kariya-shi, Aichi, JP;
Hidefumi Takaya, Toyota, JP;
Shoji Mizuno, Kariya, JP;
Yukihiko Watanabe, Nagakute, JP;
Sachiko Aoi, Nagakute, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A method for manufacturing an insulated gate switching device is provided. The method includes: forming a first trench in a surface of a first SiC semiconductor layer; implanting p-type impurities into a bottom surface of the first trench; depositing a second SiC semiconductor layer on an inner surface of the first trench to form a second trench; and forming a gate insulating layer, a gate electrode, a first region and a body region so that the gate insulating layer covers an inner surface of the second trench, the gate electrode is located in the second trench, the first region is of n-type and in contact with the gate insulating layer, the body region is of p-type, separated from the implanted region, and in contact with the gate insulating layer under the first region.