The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
May. 01, 2017
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-Do, KR;
Waljun Kim, Yongin-si, KR;
Yeonhong Kim, Yongin-si, KR;
Junghyun Kim, Yongin-si, KR;
Taejin Kim, Yongin-si, KR;
Kiwan Ahn, Yongin-si, KR;
Yongjae Jang, Yongin-si, KR;
SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;
Abstract
A semiconductor device including a semiconductor layer, a first electrode, and a second electrode. The semiconductor layer includes a first source region, a first drain region, a second source region, and a second drain region connected to a channel region. The first gate electrode is disposed below the semiconductor layer. The first gate electrode is insulated from the semiconductor layer. The first gate electrode at least partially overlaps the shared channel region. The second gate electrode is disposed above the semiconductor layer. The second gate electrode is insulated by a second gate insulating layer. The second gate electrode at least partially overlaps the channel region.