The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Dec. 21, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventor:

Jong Chul Park, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/02 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 27/2427 (2013.01); H01L 45/1233 (2013.01); H01L 45/1683 (2013.01); H01L 45/06 (2013.01); H01L 45/065 (2013.01);
Abstract

A semiconductor device includes first isolation lines positioned above a substrate and extending in a first direction. Second isolation lines are positioned above the first isolation lines and extend in a second direction, perpendicular to the first direction, to have a right angle on a plane parallel to an upper surface of the substrate. A first conductive line is disposed between the first isolation lines. The first conductive line is spaced apart from the substrate. A second conductive line is disposed between the second isolation lines. First data storage patterns are disposed between the first isolation lines. The first data storage patterns are positioned above the first conductive line. Second data storage patterns are disposed between the second isolation lines. The second data storage patterns are positioned above the second conductive line. A third conductive line is positioned above the second isolation lines and extends in the first direction.


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