The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Apr. 22, 2016
Shanghai Jadic Optoelectronics Technology Co., Ltd., Shanghai, CN;
Jianhong Mao, Shanghai, CN;
Cheng Xu, Shanghai, CN;
SHANGHAI JADIC OPTOELECTRONICS TECHNOLOGY CO., LTD., Shanghai, CN;
Abstract
A photosensitive imaging apparatus and a method of forming such an apparatus are disclosed. The apparatus includes: a first semiconductor substrate, including a photosensitive semiconductor layer including an array of photodetectors; and a second semiconductor substrate, stacked with the first semiconductor substrate and including a pixel-circuitry semiconductor layer including an array of in-pixel amplifier circuitries. Each in-pixel amplifier circuitry includes at least one first pixel MOS transistor. Each first pixel MOS transistor has an active region disposed between the gate layer thereof and the first semiconductor substrate. The photosensitive imaging apparatus allows an effective reduction in noises produced during light reception of the in-pixel amplifier circuitries and an increased light utilization of the photodetectors. In addition, by separating the pixel-circuitry semiconductor layer from the photosensitive semiconductor layer, the apparatus achieves better process compatibility and is conducive to separate design and process optimization of the in-pixel amplifier circuitries and the photodetectors.