The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Feb. 27, 2017
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
Tzung-Yin Lee, Costa Mesa, CA (US);
Aniruddha B. Joshi, Irvine, CA (US);
David Scott Whitefield, Andover, MA (US);
Maureen Rosenberg Brongo, Ladera Ranch, CA (US);
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 23/66 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 21/84 (2013.01); H01L 23/66 (2013.01); H01L 27/1203 (2013.01); H01L 27/1222 (2013.01); H01L 27/1255 (2013.01); H01L 27/1259 (2013.01); H01L 29/0696 (2013.01); H01L 29/1087 (2013.01); H01L 29/41733 (2013.01); H01L 29/4238 (2013.01); H01L 29/78615 (2013.01); H01L 29/78618 (2013.01); H01L 2223/6666 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/49171 (2013.01); H01L 2924/181 (2013.01);
Abstract
A radio-frequency (RF) device includes a semiconductor substrate, a first field-effect transistor (FET) disposed on the substrate, the first FET having a first plurality of drain fingers, and a second FET connected in series with the first FET along a first dimension, the second FET having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.