The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Sep. 22, 2016
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Thomas Fischer, Regensburg, DE;

Carsten Ahrens, Pettendorf, DE;

Damian Sojka, Regensburg, DE;

Andre Schmenn, Sachsenkam, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 27/02 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 21/784 (2006.01); H01L 21/288 (2006.01); H01L 21/78 (2006.01); H01L 23/495 (2006.01); H01L 23/544 (2006.01); H01L 23/482 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 21/288 (2013.01); H01L 21/7685 (2013.01); H01L 21/78 (2013.01); H01L 21/784 (2013.01); H01L 23/495 (2013.01); H01L 23/522 (2013.01); H01L 23/544 (2013.01); H01L 23/562 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/83 (2013.01); H01L 24/94 (2013.01); H01L 24/98 (2013.01); H01L 23/4827 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 2223/5446 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/0569 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/2746 (2013.01); H01L 2224/2747 (2013.01); H01L 2224/291 (2013.01); H01L 2224/2916 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29118 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/29164 (2013.01); H01L 2224/29166 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01026 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/1032 (2013.01); H01L 2924/1037 (2013.01); H01L 2924/10252 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/10335 (2013.01); H01L 2924/10337 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1431 (2013.01);
Abstract

According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage.


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