The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jul. 18, 2017
Applicant:
Socionext Inc., Kanagawa, JP;
Inventor:
Masanobu Hirose, Kameoka, JP;
Assignee:
SOCIONEXT INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); G11C 11/418 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/092 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G11C 11/418 (2013.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01);
Abstract
The present disclosure allows for reducing parasitic capacitance of a bit line, and a drop in access performance in an SRAM cell including fin-type transistors. The SRAM cell is defined by transistors each of which has a fin structure and by a local metal interconnection layer. Bit lines are formed on the local metal interconnection layer, and diffusion layer contacts corresponding to bit line nodes are connected through vias to the bit lines.