The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Jan. 29, 2018
Applicant:

Kulite Semiconductor Products, Inc., Leonia, NJ (US);

Inventor:

Sorin Stefanescu, New Milford, NJ (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01); H01L 23/48 (2006.01); H01L 21/44 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/45 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05084 (2013.01); H01L 2924/14 (2013.01); H01L 2924/146 (2013.01); H01L 2924/201 (2013.01); H01L 2924/2011 (2013.01); H01L 2924/20108 (2013.01); H01L 2924/20109 (2013.01); H01L 2924/20111 (2013.01); H01L 2924/365 (2013.01);
Abstract

Systems and methods are disclosed for providing an interconnection for extending high-temperature use in sensors and other electronic devices. The interconnection includes a semiconductor layer; an ohmic contact layer disposed on a first region of the semiconductor layer; an insulating layer disposed on a second region of the semiconductor layer, where the second region differs from the first region; a metal layer disposed above at least the insulating layer and the ohmic contact layer; and a connecting conductive region disposed on the metal layer and in vertical alignment with a third region of the semiconductor layer. The third region differs from the first region and is offset from the ohmic contact layer at the first region. The offset is configured to extend an operational lifetime of the interconnection apparatus, particularly when the interconnection apparatus is exposed to high temperature environments.


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