The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Dec. 27, 2017
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;
Inventors:
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/85 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05015 (2013.01); H01L 2224/05076 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05188 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/291 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/4502 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48453 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/85205 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/35121 (2013.01);
Abstract
A semiconductor device is provided. The semiconductor device includes an electrode pad provided above a semiconductor substrate; and a wire bonded on the electrode pad and including copper. The electrode pad includes an electrode layer including aluminum and a support layer harder than the wire and the electrode layer. The wire is in contact with the electrode layer and the support layer.
Quick Actions:
Watanabe, Takemasa. (2018). Semiconductor device and method of manufacturing the same (U.S. Patent No. 10153241). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10153241
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile