The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Aug. 31, 2015
Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Takaaki Miyazaki, Tokyo, JP;

Osamu Ikeda, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/049 (2006.01); H01L 23/00 (2006.01); H01L 23/12 (2006.01); H01L 23/36 (2006.01); B60R 16/02 (2006.01); B61C 17/00 (2006.01); H01L 23/373 (2006.01); H01L 23/492 (2006.01); H01L 23/053 (2006.01); H02M 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); B60R 16/02 (2013.01); B61C 17/00 (2013.01); H01L 23/049 (2013.01); H01L 23/053 (2013.01); H01L 23/12 (2013.01); H01L 23/36 (2013.01); H01L 23/3735 (2013.01); H01L 23/4924 (2013.01); H01L 24/73 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/14252 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/3512 (2013.01); H02M 7/003 (2013.01);
Abstract

A semiconductor device is provided, the semiconductor device having: a semiconductor chip; a wiring substrate which supports the semiconductor chip and is electrically connected to the semiconductor chip; a first metal plate which supports the wiring substrate; a second metal plate which is arranged between the wiring substrate and the first metal plate; a first bonding part which bonds the wiring substrate and the second metal plate; and a second bonding part which bonds the first metal plate and the second metal plate, and having a thickness of an outer circumferential part of the second metal plate being larger than a thickness of a center part of the second metal plate.


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