The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Aug. 31, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Eiichi Soda, Nagoya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 27/11582 (2017.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/486 (2013.01); G03F 7/0002 (2013.01); G03F 7/0037 (2013.01); H01L 21/4846 (2013.01); H01L 27/11582 (2013.01);
Abstract

According to one embodiment, there is provided a manufacturing method of a semiconductor device. The method includes forming a film to be processed on a substrate. The method includes forming a first resist pattern on the film, the first resist pattern having a first stepped structure including a plurality of steps. The method includes forming a second resist pattern on the first resist pattern by use of a template for nanoimprint. The second resist pattern has a second stepped structure, which is arranged corresponding to the first stepped structure and is formed such that a step-up surface extends perpendicularly to a flat surface. The method includes processing the film through the second resist pattern and the first resist pattern.


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