The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Mar. 09, 2015
Toshiba Memory Corporation, Tokyo, JP;
Tomoko Ojima, Tokyo, JP;
Toshiba Memory Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device according to an embodiment includes forming a first interlayer film on a first layer, the first interlayer film containing a first molecule and a second molecule, and the first molecule and the second molecule being chemically bonded with each other. The method of manufacturing a semiconductor device includes phase-separating the first interlayer film. The method of manufacturing a semiconductor device includes forming a second layer on the phase-separated first interlayer film. The first molecule has a first affinity with the first layer and a second affinity with the second layer, the first affinity being larger than the second affinity. The second molecule has a third affinity with the second layer and a fourth affinity with the first layer, the third affinity being larger than the fourth affinity.