The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jan. 26, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Hwa Jin Jang, Hwaseong-si, KR;
Jae Young Park, Yongin-si, KR;
Sun Young Lee, Yongin-si, KR;
Ha Kyu Seong, Hwaseong-si, KR;
Han Mei Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device is provided. The method includes forming a first fin structure which includes first semiconductor patterns and second semiconductor patterns stacked alternately on a substrate and extends in a first direction, forming an exposed first wire pattern group which includes the second semiconductor patterns by removing the first semiconductor patterns, heat-treating the exposed first wire pattern group, and forming a first gate electrode which surrounds the first wire pattern group and extends in a second direction different from the first direction.