The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jul. 27, 2017
Toshiba Memory Corporation, Tokyo, JP;
Shinichi Nakao, Yokkaichi Mie, JP;
Shunsuke Ochiai, Yokkaichi Mie, JP;
Yusuke Oshiki, Kuwana Mie, JP;
Kei Watanabe, Yoakkaichi Mie, JP;
Mitsuhiro Omura, Kuwana Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes forming a mask layer including a) one metal from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium, b) boron, and c) carbon on a layer to be etched. The mask layer is patterned. A hole or a groove is formed in the layer to be etched by performing dry etching on the layer to be etched using the patterned mask layer. The mask layer includes a first region and a second region. The first region includes boron and the second region includes boron such that a density of boron in the second region is different from a density of boron in the first region, or the first region includes carbon and the second region includes carbon such that a density of carbon in the second region is different from a density of carbon in the first region.