The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jun. 14, 2017
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventor:
Min Sung Ko, Gwangju-si Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 21/324 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02675 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/324 (2013.01); H01L 21/76877 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); H01L 28/00 (2013.01);
Abstract
In accordance with an embodiment of the present disclosure, a method of manufacturing a semiconductor device may include forming an opening passing-through a multi-layer stack, forming a channel layer on and along a sidewall of the opening, forming a conductive layer on and along a sidewall of the channel layer, and applying a laser to the conductive layer to transfer a heat from the conductive layer to the channel layer to heat-treat the channel layer using the heat.