The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Dec. 08, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Mattias Bengt Borg, Adliswil, CH;

Kirsten Emilie Moselund, Rueschlikon, CH;

Heike E. Riel, Baech, CH;

Heinz Schmid, Waedenswil, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02603 (2013.01); H01L 21/0262 (2013.01); H01L 21/02422 (2013.01); H01L 21/02546 (2013.01); H01L 21/02639 (2013.01); H01L 21/02645 (2013.01); H01L 21/76262 (2013.01); H01L 21/02647 (2013.01);
Abstract

Methods are provided for fabricating semiconductor nanowires on a substrate. A nanowire template is formed on the substrate. The nanowire template defines an elongate tunnel which extends, laterally over the substrate, between an opening in the template and a seed surface. The seed surface is exposed to the tunnel and of an area up to about 2×10nm. The semiconductor nanowire is selectively grown, via said opening, in the template from the seed surface. The area of the seed surface is preferably such that growth of the nanowire proceeds from a single nucleation point on the seed surface. There is also provided a method for fabricating a plurality of semiconductor nanowires on a substrate and a semiconductor nanowire and substrate structure.


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