The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Sep. 29, 2015
Applicant:

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Takehito Kozasa, Tsukuba, JP;

Manabu Yoshida, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G08B 6/00 (2006.01); G06F 3/041 (2006.01); H01G 7/02 (2006.01); H03K 17/955 (2006.01); H03K 17/975 (2006.01); G01P 15/08 (2006.01); G06F 3/01 (2006.01); G06F 3/0354 (2013.01); H01L 21/31 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 29/82 (2006.01); H01L 29/84 (2006.01); H01L 41/113 (2006.01); B81B 3/00 (2006.01); G06F 3/044 (2006.01); G01L 1/22 (2006.01);
U.S. Cl.
CPC ...
G06F 3/041 (2013.01); B81B 3/0021 (2013.01); G01L 1/2293 (2013.01); G01P 15/08 (2013.01); G06F 3/016 (2013.01); G06F 3/03545 (2013.01); G06F 3/044 (2013.01); H01G 7/02 (2013.01); H01L 21/31 (2013.01); H01L 29/513 (2013.01); H01L 29/78 (2013.01); H01L 29/82 (2013.01); H01L 29/84 (2013.01); H01L 41/1132 (2013.01); H03K 17/955 (2013.01); H03K 17/975 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0264 (2013.01);
Abstract

Provided are an element applicable to a high-precision, high-sensitivity pressure detecting sensor and switch, a manufacturing method for the element; and a sensor, an electronic circuit, and an input device that include the element. The electret element of the present invention has a semiconductor sandwiched between a pair of electrodes, and an electret film disposed at a location opposite to the semiconductor via a gap. The electret element of the present invention may be structured so that the semiconductor contacts with the electret film, or so as to have micro-sized gaps therebetween. The electret film is semi-permanently kept in a positively or negatively charged state. By having a structure in which the electret film can contact with or approach the semiconductor, an amount of electric currents flowing between the pair of electrodes can be controlled.


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