The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Jan. 13, 2017
Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventors:

Xianwang Wei, Guangdong, CN;

Yang Liu, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01); G02F 1/1333 (2006.01); G02F 1/1335 (2006.01);
U.S. Cl.
CPC ...
G02F 1/134363 (2013.01); G02F 1/133345 (2013.01); G02F 1/133514 (2013.01); G02F 2201/121 (2013.01);
Abstract

The present application discloses an array substrate and its fabricating method thereof, the array substrate including a substrate, a gate electrode, a gate insulating layer, a channel layer, an insulating layer, and a passivation layer sequentially formed on the surface of the substrate; an oxide semiconductor layer constituting the channel layer and a plurality of first IPS electrodes spaced apart from the oxide semiconductor layer is further provided on the gate insulating layer; the insulating layer covers the oxide semiconductor layer and the oxide semiconductor layer and the plurality of first IPS electrodes; the passivation layer covers the channel layer and formed with trenches, the trenches located on a side of each of the first IPS electrode and extending to the gate insulation layer; a second IPS electrodes corresponding to the first IPS electrodes and connected to the first IPS electrodes are formed on the passivation layer.


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