The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Nov. 28, 2017
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Takayasu Otagaki, Ota, JP;

Kazuyoshi Ishikawa, Kumagaya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 23/26 (2006.01); B65D 25/20 (2006.01); B65D 25/02 (2006.01); G08B 21/18 (2006.01); B65D 90/48 (2006.01);
U.S. Cl.
CPC ...
G01F 23/265 (2013.01); B65D 25/02 (2013.01); B65D 25/20 (2013.01); B65D 90/48 (2013.01); G01F 23/266 (2013.01); G01F 23/268 (2013.01); G08B 21/182 (2013.01);
Abstract

Level sensing designs and techniques that inherently compensate for physical variations in the flowable material. An illustrative container includes an electrode arrangement having two electrodes along a vertical span creating corresponding capacitances indicative of a level of the material within that vertical span. Differing electrode shapes or positions provide the capacitances with different dependences on the level. A level detection method includes: (i) measuring a first capacitance between a drive electrode and a first sensing electrode; (ii) measuring a second capacitance between the drive electrode and a second sensing electrode; and (iii) determining a ratio of variances in the first and second capacitances, the variances being relative to first and second capacitances for a container empty of the material. The ratio is indicative of said level and insensitive to temperature and permittivity of the material.


Find Patent Forward Citations

Loading…