The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Sep. 10, 2015
National University Corporation Nagoya University, Nagoya-shi, Aichi, JP;
Central Glass Co., Ltd., Ube-shi, Yamaguchi, JP;
Toru Ujihara, Nagoya, JP;
Shunta Harada, Nagoya, JP;
Daiki Koike, Nagoya, JP;
Tomonori Umezaki, Ube, JP;
National University Corporation Nagoya University, Nagoya-shi, JP;
Central Glass Co., Ltd., Ube-shi, JP;
Abstract
Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.