The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jul. 13, 2017
Kyocera Corporation, Kyoto-shi, Kyoto, JP;
Chiaki Domoto, Kyoto, JP;
Katsuaki Masaki, Kyoto, JP;
Yutaka Kuba, Kyoto, JP;
Daisuke Ueyama, Kyoto, JP;
Kouji Miyamoto, Kyoto, JP;
Yuuichiro Hayashi, Kyoto, JP;
KYOCERA CORPORATION, Kyoto-Shi, Kyoto, JP;
Abstract
A method for producing a crystal, according to the present invention, where the lower surfaceB of a seed crystalwhich is rotatably arranged and made of silicon carbide is brought into contact with a solutionof silicon solvent containing carbon in a cruciblewhich is rotatably arranged and the seed crystalis pulled up and a crystal of silicon carbide is grown from the solutionon the lower surfaceB of the seed crystalcomprising the steps of bringing the lower surfaceB of the seed crystalinto contact with the solutionin a contact step, rotating the seed crystalin a seed crystal rotation step, rotating the cruciblein a crucible rotation step, and stopping rotation of the cruciblewhile the seed crystalis rotated in the state in which the lower surfaceB of the seed crystalis in contact with the solutionin a deceleration step.