The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jan. 22, 2015
Applicant:
Wacker Chemie Ag, Munich, DE;
Inventors:
Harald Hertlein, Burghausen, DE;
Friedrich Popp, Ooltewah, TN (US);
Assignee:
WACKER CHEMIE AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/035 (2006.01); C23C 16/24 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C01B 33/035 (2013.01); C23C 16/24 (2013.01); C23C 16/4408 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01);
Abstract
The native oxide layer on silicon support rods in the Siemens polysilicon production process is removed by heating the rods to a temperature of 1100-1200° C. and contacting the rods with hydrogen at a system pressure of 1.1E5 to 6E6 Pa. Oxide is rapidly removed, reducing overall process time and increasing space time yield. The use of hydrogen, optionally purified from a polysilicon deposition and containing only traces of HCl reduces reactor corrosion and loss of silicon from the support rods.