The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Aug. 04, 2017
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Jason Robert Parolini, Anderson, SC (US);

James Joseph Murray, Piedmont, SC (US);

Matthew Troy Hafner, Honea Path, SC (US);

Canan Uslu Hardwicke, Simpsonville, SC (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D 3/02 (2006.01); B05D 5/00 (2006.01); B22F 3/26 (2006.01); B23P 6/04 (2006.01); C23C 6/00 (2006.01); C04B 35/14 (2006.01); C23C 26/02 (2006.01); C04B 35/565 (2006.01); C04B 35/653 (2006.01);
U.S. Cl.
CPC ...
B23P 6/04 (2013.01); B05D 3/0254 (2013.01); B05D 5/005 (2013.01); B22F 3/26 (2013.01); C04B 35/14 (2013.01); C04B 35/565 (2013.01); C04B 35/653 (2013.01); C23C 6/00 (2013.01); C23C 26/02 (2013.01); B05D 2203/30 (2013.01); B05D 2401/30 (2013.01);
Abstract

A method of treating a ceramic matrix composite article, including selecting an article having a ceramic composition formed by a process comprising an initial melt infiltration at an initial temperature with an initial infiltration material, whereby said article has at least one treatable feature. A portion of the ceramic composite is removed from a region abutting the treatable feature to form a treatment region. A treatment material including a reinforcing fiber is positioned in the treatment region and densified by a first melt infiltration with a first infiltration material including silicon. The first melt infiltration is performed at a first temperature lower than the initial infiltration temperature of the initial melt infiltration.


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