The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Feb. 17, 2016
Applicant:
Stmicroelectronics (Tours) Sas, Tours, FR;
Inventors:
Jean-Michel Simonnet, Veretz, FR;
Christian Ballon, Tours, FR;
Assignee:
STMicroelectronics (Tours) SAS, Tours, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04M 1/74 (2006.01); H01L 27/02 (2006.01); H02H 9/04 (2006.01); H04M 3/18 (2006.01); H04M 3/00 (2006.01); H04M 19/08 (2006.01);
U.S. Cl.
CPC ...
H04M 1/745 (2013.01); H01L 27/0248 (2013.01); H02H 9/041 (2013.01); H02H 9/043 (2013.01); H04M 3/005 (2013.01); H04M 3/18 (2013.01); H04M 19/08 (2013.01); H04M 2201/80 (2013.01);
Abstract
A structure protects a SLIC telephone line interface against overvoltages lower than a negative threshold or higher than a positive threshold. The structure includes at least one thyristor connected between each conductor of the telephone line and a reference potential. For all of the included thyristors, a metallization corresponding to the main electrode on the gate side is in contact, by its entire surface, with a corresponding semiconductor region. Furthermore, the gate of each thyristor is directly connected to a voltage source defining one of the thresholds.