The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2018

Filed:

Nov. 15, 2017
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventor:

Myung Cheol Yoo, Pleasanton, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 33/46 (2010.01); H01L 33/60 (2010.01); H01L 33/04 (2010.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01L 33/42 (2010.01); H01L 33/62 (2010.01); H01L 33/54 (2010.01); H01L 33/64 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/0079 (2013.01); H01L 33/04 (2013.01); H01L 33/14 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/54 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/641 (2013.01);
Abstract

A light emitting device includes an adhesion structure on a metal support structure; a first metal layer on the adhesion structure; a second metal layer comprising Ti on the first metal layer; a GaN-based semiconductor structure on the second metal layer, which includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, a second-type semiconductor layer on the active layer, a bottom surface proximate to the metal support structure, a top surface, and a side surface, in which a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers; an interface layer comprising Ti; and a contact pad, in which the second metal layer directly contacts the GaN-based semiconductor structure, and a second thickness of the metal support structure is 0.5 times or less than a width of the top surface.


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