Method of producing iii nitride semiconductor light-emitting device

Abstract

We propose a method of producing a III nitride semiconductor light-emitting devicehaving a p-type semiconductor layerin this order, wherein the p-type semiconductor layeris formed by the steps comprising: an electron blocking layer formation step for forming an electron blocking layerhaving an Al content higher than that of the barrier layeron the light emitting layera nitrogen carrier gas supply step for supplying at least a carrier gas containing nitrogen as a main component to a surface of the electron blocking layerand a second p-type contact formation step for forming a second p-type contact layermade of AlGaN on the electron blocking layerafter the nitrogen carrier gas supply step, and wherein the second p-type contact formation step is performed using a carrier gas containing hydrogen as a main component.