The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
May. 31, 2013
Applicant:
The Board of Regents of the University of Texas System, Austin, TX (US);
Inventors:
Assignee:
Board of Regents of the University of Texas System, Austin, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
C25B 1/00 (2006.01); C25B 1/26 (2006.01); C25B 9/00 (2006.01); H01L 31/18 (2006.01); C25D 3/56 (2006.01); C25D 3/66 (2006.01); C25D 9/08 (2006.01); H01L 31/0288 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); C25D 3/56 (2013.01); C25D 3/66 (2013.01); C25D 9/08 (2013.01); H01L 31/0288 (2013.01);
Abstract
A method of producing a silicon film includes: forming a deposition composition comprising silicon dioxide dispersed in a molten salt; placing a metal substrate and a counter electrode in the composition; and passing a reducing current between the metal substrate and the counter electrode, wherein the reducing current causes reduction of silicon dioxide particles to form a silicon film on the metal substrate.
Cho, Sung. (2018). Production of thin film solar grade silicon on metals by electrodeposition from silicon dioxide in a molten salt (U.S. Patent No. 10147836). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10147836
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile