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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10147811 B1

PDFFull Text
Date of Patent:
Dec. 04, 2018

Filed:

Mar. 10, 2017

Process of forming a high electron mobility transistor (hemt)

Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Ken Nakata, Yokohama, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;

Attorney:

Smith, Gambrell & Russell, LLP.

Primary Examiner:

Caridad Everhart

Assistant Examiner:

Ankush Singal

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/467 (2006.01); H01L 21/3065 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/3065 (2013.01); H01L 21/467 (2013.01); H01L 29/0843 (2013.01); H01L 29/1029 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/42376 (2013.01); H01L 29/66969 (2013.01);
Abstract

A process of forming a High Electron Mobility Transistor (HEMT) is disclosed. The HEMT includes a substrate, a channel layer, a barrier layer, and heavily doped regions made of metal oxide. The channel layer and the barrier layer provide recesses and a mesa therebetween. The heavily doped regions are formed by partially removing portions of a heavily doped layer on the mesa so as to have slant surfaces facing the gate electrode. The slant surfaces make angle of 135° to 160° relative to the top horizontal level of the mesa.

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Nakata, Ken. (2018). Process of forming a high electron mobility transistor (hemt) (U.S. Patent No. 10147811). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10147811

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