The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2018

Filed:

May. 01, 2017
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Takumi Fujimoto, Matsumoto, JP;

Naoki Kumagai, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 21/28 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/0485 (2013.01); H01L 21/28 (2013.01); H01L 29/1608 (2013.01); H01L 29/417 (2013.01); H01L 29/41741 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01); H01L 29/1095 (2013.01);
Abstract

A silicon carbide semiconductor device, including a silicon carbide semiconductor structure, an insulated gate structure, an interlayer insulating film formed on the insulated gate structure, a poly-silicon film formed on the interlayer insulating film, and a main electrode formed on the poly-silicon film and in electrical connection with the silicon carbide semiconductor structure. The insulated gate structure includes a gate insulating film, which is a silicon dioxide film contacting the silicon carbide semiconductor structure, and a gate electrode formed on the gate insulating film.


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