The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2018

Filed:

May. 26, 2017
Applicant:

Stmicroelectronics Design and Application S.r.o., Prague, CZ;

Inventors:

Patrik Vacula, Prague, CZ;

Milos Vacula, Humenne, SK;

Vlastimil Kote, Bechlin, CZ;

Adam Kubacak, Prague, CZ;

Milan Lzicar, Jinocany, CZ;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 27/088 (2013.01); H01L 29/0696 (2013.01); H01L 29/401 (2013.01); H01L 29/66462 (2013.01); H01L 29/66477 (2013.01); H01L 29/778 (2013.01);
Abstract

The present disclosure is directed to a plurality of waffle gate parallel transistors having a shared gate on a surface of a semiconductor substrate. The shared gate has connected channels that form a plurality of squares, lines of each of the squares over the perimeter of a respective source or drain region of the plurality of waffle gate parallel transistors. The shared gate includes squares of a first size and shape and a second size and shape. The squares having the first size and shape are each over a respective source region and the squares having the second size and shape are each over a respective drain region. Each of the squares having a first size and shape share at least one side with one of the squares having the second size and shape.


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