The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Jul. 15, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Sung-Min Kim, Incheon, KR;
Ji-Su Kang, Seoul, KR;
Byung-Chan Ryu, Seongnam-si, KR;
Jae-Hyun Park, Osan-si, KR;
Yu-Ri Lee, Suwon-si, KR;
Dong-Ho Cha, Seongnam-si, KR;
Abstract
A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.